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115 Electronic Materials Processing
(formerly ChE 189 Special Topics in Materials Processing)
units (3-0-6); third term
ChE 63, ChE 101, ChE 103 abc, or equivalent. After a brief introduction to solid-state concepts, materials, and devices relevant to electronic applications, the course will cover the prevalent growth and etching techniques used in the processing of electronic materials. Emphasis is given on the underlying physical and chemical principles. Crystal and thin film growth techniques to be covered include: physical and chemical vapor deposition, liquid-phase epitaxy, molecular beam epitaxy, and plasma-assisted deposition. Property altering processes such as diffusion, oxidation, and doping are also included. Plasma etching is introduced with emphasis on determining key parameters that control the ion energy and flux to the wafer surface. Key techniques for thin film analysis and characterization are briefly discussed. Instructor: Giapis.