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ChE
189 Special Topics in Materials Processing
9
units (3-0-6); third term
Prerequisites:
ChE 63, ChE 103, or equivalent. Fundamental physics and
chemistry of partially ionized, chemically reactive, low-pressure
plasmas and their roles in electronic materials processing.
Basic plasma equations and equilibrium. Plasma and sheath
dynamics. Gas-surface interactions. Plasma diagnostics and
monitoring. Plasma-assisted etching and deposition in integrated
circuit fabrication. Instructor: Giapis. Given in alternate years; offered 2007-08.
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