Publications

PUBLICATION LIST OF K. P. GIAPIS

(updated February 11, 2007)

BOOK CHAPTER

Chapter 7 Fundamentals of Plasma Process-Induced Charging and Damage

in "Handbook of Advanced Plasma Processing Techniques", pp. 257-308, Shul and Pearton (Eds.), ISBN 3-540-66772-5, Springer Verlag (2000).

PEER-REVIEWED PUBLICATIONS

Recent Publications (1997-to-present)

64. "Simulations of contact angles and ordering of mercury drops on graphite and in carbon nanotubes," A. Kutana and K.P. Giapis, Nano Lett., (submitted, 01/30/2007).

63. "Evidence of simultaneous double-electron promotion in F+ collisions with surfaces," J. Mace, M.J. Gordon, and K.P. Giapis, Phys. Rev. Lett., 97, 257603 (2006).

62. "A transient deformation regime in bending of single-walled carbon nanotubes," A. Kutana and K.P. Giapis, Phys. Rev. Lett., 97, 245501 (2006).

61. "Amplitude response of single-wall carbon nanotube probes during tapping mode AFM: modeling and experiment," A. Kutana, K.P. Giapis, J.Y. Chen, and C.P. Collier Nano Lett. 6, 1669 (2006).

60. "Neutralization of hyperthermal Ne+ on metal surfaces," A. Kutana and M.J. Gordon and K.P. Giapis, Nuclear Instr. Methods B. 248, 16 (2006).

59. "Atomistic Simulations of Electrowetting in Carbon Nanotubes" A. Kutana and K.P. Giapis, Nano Lett. 6, 656 (2006).

58. "Electrowetting in Carbon Nanotubes," J.Y. Chen, A. Kutana, C.P. Collier, and K.P. Giapis, Science 310, 1480 (2005).

57. "Low-energy ion beamline scattering apparatus for surface science investigations," M.J. Gordon and K.P. Giapis, Rev. Sci. Instr. 76, 083302(2005).

56. "Charge exchange mechanisms at the threshold for inelasticity in Ne+ collisions with surfaces," M.J. Gordon and J. Mace, and K.P. Giapis, Phys. Rev. A 72, 012904(2005).

55. "Synthesis of blue-luminescent silicon nanoparticles using atmospheric pressure microdischarges," R. M. Sankaran, D. Holunga, R.C. Flagan, and K.P. Giapis, Nano Lett. 5, 537 (2005).

54. "Nanoelectrode Scanning Probes from Fluorocarbon-Coated Single-Wall Carbon Nanotubes," M.J. Esplandiu, V.G. Bittner, K.P. Giapis, and C.P. Collier Nano Lett. 4, 1873 (2004).

53. "Characterization of excimer emission from microdischarges at atmospheric pressure," R.M. Sankaran, M. Moselhy, K.H. Schoenbach and K. P. Giapis, Appl. Phys. Lett. 83, 4728 (2003).

52. "High-pressure micro-discharges in etching and deposition applications," R. M. Sankaran and K. P. Giapis, J. Phys.D: Applied Physics 36, 2914 (2003).

51. "Microhollow cathode sustained plasma microjets: Characterization and application to diamond deposition," R. M. Sankaran and K. P. Giapis, J. Appl. Phys. 92, 2406 (2002).

50. "The Role of Mask Charging in Profile Evolution and Gate Oxide Degradation,” K.P. Giapis, G. S. Hwang and O. Joubert , Microelectronic Engineering 61-2, 835 (2002).

49. "Maskless Etching of Silicon Using Patterned Microdischarges," R. M. Sankaran and K. P. Giapis, Appl. Phys. Lett. 79, 593 (2001).-----> Inside R&D report about this paper

48. "Plasma interactions with high aspect ratio patterned surfaces: ion transport, scattering, and the role of charging," K. P. Giapis and G. S. Hwang, Thin Solid Films 374,175 (2000).

47. "Charging Damage during Latent Antenna Overetching," G. S. Hwang and K. P. Giapis, Appl. Phys. Lett. 74, 932 (1999).

46. "Heavy Charging Damage during Dielectric Deposition in High-Density Plasmas," G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 17, 999 (1999).

45. "Pattern-Dependent Charging in Plasmas," G. S. Hwang and K. P. Giapis, IEEE Trans. Plasma Sci., Special Issue: Images in Plasma Science 27, 102 (1999).

44. "The Influence of Surface Currents on Pattern-Dependent Charging and Notching," G. S. Hwang and K. P. Giapis, J. Appl. Phys. 84, 683 (1998).

43. "Modeling of Charging Damage during Interlevel Oxide Deposition in High-Density Plasmas," G. S. Hwang and K. P. Giapis, J. Appl. Phys. 84, 154 (1998).

42. "Mechanism of Charging Reduction in Pulsed Plasma Etching," G. S. Hwang and K. P. Giapis, Jap. J. Appl. Phys. 37, 2291 (1998).

41. "Pattern-Dependent Charging and the Role of Electron Tunneling," K. P. Giapis and G. S. Hwang, Jap. J. Appl. Phys. 37, 2281 (1998).

40. "The Role of the Substrate on Pattern-Dependent Charging," G. S. Hwang and K. P. Giapis, J. Electrochem. Soc. 144, L320 (1997).

39. "On the Origin of Charging Damage during Etching of Antenna Structures," G. S. Hwang and K. P. Giapis, J. Electrochem. Soc. 144, L285 (1997).

38. "Simulation of Current Transients through Ultrathin Gate Oxides during Plasma Etching," G. S. Hwang and K. P. Giapis, Appl. Phys. Lett. 71, 1945 (1997).

37. "How Tunneling Currents Reduce Plasma-Induced Charging," G. S. Hwang and K. P. Giapis, Appl. Phys. Lett. 71 (20), 2928 (1997).

36. "Ion Mass Effect on Plasma-Induced Charging," G. S. Hwang and K. P. Giapis, Appl. Phys. Lett. 71, 1942 (1997).

35. "Aspect Ratio Independent Etching of Dielectrics," G. S. Hwang and K. P. Giapis, Appl. Phys. Lett. 71, 458 (1997).

34. "Electron Irradiance of Conductive Sidewalls: A determining Factor for Charging Damage," G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 15(5), 1741 (1997).

33. Inelastic Scattering Dynamics of Fluorine Atoms on a Fluorinated Silicon Surface," T. K. Minton, K. P. Giapis, and T. A. Moore, J. Phys. Chem. A 101, 6549 (1997).

32. "The Influence of Mask Thickness on Charging Damage During Overetching," G. S. Hwang and K. P. Giapis, J. Appl. Phys. 82, 572 (1997).

31. "On the Link between Electron Shadowing and Charging Damage," G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 15(5), 1839 (1997).

30. "Symmetry Reduction in Group 4mm Photonic Crystals," C. M. Anderson and K. P. Giapis, Phys. Rev. B 56, 7313 (1997).

29. "Prediction of Multiple-Feature Effects in Plasma Etching," G. S. Hwang and K. P. Giapis, Appl. Phys. Lett. 70, 2377 (1997).

28. "Aspect-Ratio-Dependent Charging in High-Density Plasmas," G. S. Hwang and K. P. Giapis, J. Appl. Phys. 82, 566 (1997).

27. "Pattern-Dependent Charging in Plasmas: Electron Temperature Effects," G. S. Hwang and K. P. Giapis, Phys. Rev. Lett. 79, 845 (1997).

26. "The Influence of Electron Temperature on Pattern-Dependent Charging during Etching in High-Density Plasmas," G. S. Hwang and K. P. Giapis, J. Appl. Phys. 81, 3433 (1997).

25. "On the Origin of the Notching Effect during Etching in Uniform High Density Plasmas," G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 15, 70 (1997).

Earlier Publications (1989-1996)

24. "Larger Two-Dimensional Photonic Band Gaps," C. M. Anderson and K. P. Giapis, Phys. Rev. Lett. 77, 2949 (1996).

23. "Gas-Surface Dynamics and Profile Evolution during Etching of Silicon," G. S. Hwang, C. M. Anderson, M. J. Gordon, T. A. Moore, T. K. Minton, and K. P. Giapis, Phys. Rev. Lett. 77, 3049 (1996).

22. "Electron Density Effects in the Modulation Spectroscopy of Strained and Lattice-Matched InGaAs/InAlAs/InP High Electron Mobility Transistor Structures," A. Dimoulas, J. Davidow, K. P. Giapis, A. Georgakilas, G. Halkias, and N. Kornelios, J. Appl. Phys. 80, 3484 (1996).

21. "Hyperthermal Neutral Beam Etching," K. P. Giapis, T. A. Moore, and T. K. Minton, J. Vac. Sci. Technol. A 13, 959 (1995).

20. "Effects of C Incorporation on the Luminescence Properties of ZnSe grown by MOCVD," B. J. Skromme, W. Liu, K. F. Jensen, and K. P. Giapis, J. Crystal Growth 138, 338 (1994).

19. "Ion Velocity Distributions in Helicon Wave Plasmas: Magnetic Field and Pressure Effects," T. Nakano, K. P. Giapis, R. A. Gottscho, T. C. Lee, and N. Sadeghi, J. Vac. Sci. Technol. B 11, 2046 (1993).

18. "Real-time, In-Situ Monitoring of Surface Reactions During Plasma Passivation of GaAs," E. S. Aydil, Z. Zhou, K. P. Giapis, Y. Chabal, J. A. Gregus, and R. A. Gottscho, Appl. Phys. Lett. 62, 3156 (1993).

17. "Limits to Ion Energy Control in High Density Glow Discharges: Measurement of Absolute Metastable Ion Concentrations," K. P. Giapis, N. Sadeghi, J. Margot, R. A. Gottscho, and T. C. Lee, J. Appl. Phys. 73, 7188 (1993).

16. "Ammonia Plasma Passivation of GaAs in Downstream Microwave and RF Parallel Plate Plasma Reactors," E. S. Aydil, K. P. Giapis, R. A. Gottscho, V. M. Donnelly, and E. Yoon, J. Vac. Sci. Technol. B 11, 195 (1993).

15. "Interband Transitions in In_xGa_1-xAs/In_0.52Al_0.48As Single Quantum Wells by Room Temperature Modulation Spectroscopy," A. Dimoulas, J. Leng, K. P. Giapis, A. Georgakilas, C. Michelakis, and A. Christou, Phys. Rev. B 47, 7198 (1993).

14. "Electric Field Dependence of Allowed and Forbidden Transitions in In_0.53Ga_0.47As/ In_0.52Al_0.48As Single Quantum Wells by Room Temperature Modulation Spectroscopy", A. Dimoulas, J. Leng, K. P. Giapis, A. Georgakilas, G. Halkias, and A. Christou, Appl. Surf. Science 63, 191 (1993).

13. "Latent Image Diffraction from Sub-Micron Photoresist Gratings," E. Yoon, C. A. Green, R. A. Gottscho, T. R. Hayes, and K. P. Giapis, J. Vac. Sci. Technol. B 10, 2230 (1992).

12. "Helicon Wave Excited Plasmas," T. Nakano, R. A. Gottscho, N. Sadeghi, D. J. Trevor, R. W. Boswell, A. J. Perry, T. C. Lee, K. P. Giapis, and J. Margot, Jap. Soc. Appl. Phys. 61, 711 (1992).

11. "Electric Field Dependence of Interband Transitions in In_0.53Ga_0.47As/In_0.52Al_0.48As Single Quantum Wells by Room Temperature Electro-Transmittance," A. Dimoulas, K. P. Giapis, J. Leng, G. Halkias, C. Zekentes, and A. Christou, J. Appl. Phys. 72, 1912 (1992).

10. "MOVPE of ZnSe Using Organometallic Allyl Selenium Precursors," S. Patnaik, K. F. Jensen, and K. P. Giapis, J. Crystal Growth 107, 390 (1991).

9. "Use of Light Scattering in Characterizing Reactively Ion Etched Profiles," K. P. Giapis, R. A. Gottscho, L. A. Clark, J. B. Kruskal, D. Lambert, A. Kornblit, and D. Sinatore, J. Vac. Sci. Technol. A 9, 664 (1991).

8. "Microscopic and Macroscopic Uniformity Control in Plasma Etching," K. P. Giapis, G. R. Scheller, R. A. Gottscho, W. S. Hobson, and Y. H. Lee, Appl. Phys. Lett. 57, 983 (1990).

7. "Real-time, In-Situ Monitoring of Low Temperature, Hydrogen Plasma Passivation of GaAs," R. A. Gottscho, B. L. Preppernau, S. J. Pearton, A. B. Emerson, and K. P. Giapis, J. Appl. Phys. 68, 440 (1990).

6. "Temperature Variations in Electrical and Photoluminescence Properties of ZnSe Grown by MOCVD," K. P. Giapis, D. C. Lu, K. F. Jensen, and J. E. Potts, J. Crystal Growth 104, 291 (1990).

5. "A New Reactor System for MOCVD of ZnSe: Modeling and Experimental Results for Growth from Dimethylzinc and Diethylselenide," K. P. Giapis, D. C. Lu, D. I. Fotiadis, and K. F. Jensen, J. Crystal Growth 104, 629 (1990).

4. "Investigation of Carbon Incorporation in ZnSe: Effects on Morphology, Electrical and Photoluminescence Properties," K. P. Giapis, K. F. Jensen, J. E. Potts, and S. J. Pachuta, J. Electron. Mater. 19, 453 (1990).

3. "Effect of Operating Conditions and Precursors on Optoelectronic Properties of OMVPE Grown ZnSe," K. P. Giapis, and K. F. Jensen, J. Crystal Growth 101, 111 (1990).

2. "Carbon Incorporation in ZnSe by Metalorganic Chemical Vapor Deposition," K. P. Giapis, K. F. Jensen, J. E. Potts, and S. J. Pachuta, Appl. Phys. Lett. 55, 463 (1989).

1. "High-Quality Epitaxial ZnSe and the Relationship Between Electron Mobility and Photoluminescence Characteristics," K. P. Giapis, D. C. Lu, and K. F. Jensen, Appl. Phys. Lett. 54, 353 (1989).

REFEREED ARCHIVES AND CONFERENCE PROCEEDINGS

xii. "On the Dependence of Plasma-Induced Charging Damage on Antenna Area", G. S. Hwang and K. P. Giapis, Proceedings of the 4th Intern. Symp. on Plasma Process-Induced Damage, (Monterey,CA, 1999), pp. 21-24.

xi. "Mechanism of Charging Damage during Interlevel Oxide Deposition in High-Density Plasma Tools", G. S. Hwang and K. P. Giapis, Proceedings of the 3rd Intern. Symp. on Plasma Process-Induced Damage, (Honolulu, HI, 1998), pp. 164-167.

x. "Mask Charging Effects on Feature Profile Evolution during High-Density Plasma Etching", G. S. Hwang and K. P. Giapis, Proceedings Symp. on Plasma Processing XII, edited by G. S. Mathad (The Electrochemical Society, Pennington, NJ), p. 66-70.

ix. "The Role of Electron Tunneling in Pattern-Dependent Charging", G. S. Hwang and K. P. Giapis, 19th Dry Process Symposium (Tokyo, 1997), p. 1-8.

viii. "Simulation of Current Transients through Ultrathin Gate Oxides during Plasma Etching", G. S. Hwang and K. P. Giapis, 23rd Annual Tegal Plasma Seminar Proceedings, (San Fransisco, CA, 1997), p. 79-90.

vii. "On the Link between Electron Shadowing and Charging Damage", G. S. Hwang and K. P. Giapis, Proc. 2nd Intern. Symp. on Plasma Process-Induced Damage, (Monterey, CA, 1997), p. 63-66.

vi. "Profile Evolution During Neutral Beam Etching", C. M. Anderson, G. S. Hwang, M. J. Gordon, and K. P. Giapis, Proc. Symp. on Plasma Processing XI, edited by G. S. Mathad and D. W. Hess (The Electrochemical Society, Pennington, NJ), Vol. 96-12, 357 (1996).

v. "Monitoring of Direct Reactions During Etching of Silicon", K. P. Giapis, T.K. Minton, M. Tagawa, and G. S. Hwang, Mat. Res. Soc. Symp. Proc., Vol. 406, 33 (1996).

iv. "Electron Density Effects in the Modulation Spectroscopy of Strained and Lattice-Matched InGaAs/InAlAs/InP High Electron Mobility Transistor Structures", A. Dimoulas, J. Davidow, K. P. Giapis, A. Georgakilas, G. Halkias, and N. Kornelios, Mat. Res. Soc. Symp. Proc., Vol. 406, 301 (1996).

iii. "Parity Allowed and Forbidden Transitions in In_xGa_1-xAs/In_0.52Al_0.48As Single Quantum Wells by Room Temperature Modulation Spectroscopy," A. Dimoulas, J. Leng, K. P. Giapis, A. Georgakilas, C. Michelakis, and A. Christou, Proc. 21st Intern. Conf. on Physics of Semicond., Beijing, P. R. China, edited by P. Jiang and H. Z. Zheng, World Scientific, Vol. 2, 1024 (1992).

ii. "Light Scattering Methods for Semiconductor Process Monitoring and Control," R. A. Gottscho, M. F. Vernon, J. A. Gregus, E. Yoon, K. P. Giapis, T. R. Hayes, W. S. Hobson, L. Clark, J. Kruskal, D. Lambert, A. Kornblit, and D. Sinatore, Proceedings SPIE Vol. 1594, 306 (1991).

i. "Effects of the Selenium Precursor on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition," K. P. Giapis, D. C. Lu, and K. F. Jensen, Mat. Res. Soc. Symp. Proc., Vol. 131, 63 (1989).

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